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SPICE MODEL: CTA2P1N
CTA2P1N
COMPLEX TRANSISTOR ARRAY Features
NEW PRODUCT
* * * *
Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P Lead Free/RoHS Compliant (Note 1)
A
SOT-363 Dim A B C D
G H K M
Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 0
Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8
Mechanical Data
* * * * * * * * *
Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking: A80, See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approx.)
Q1
A80
BC
0.65 Nominal
F H J K L M a
J
D
GQ2
F
SQ2
L
CQ1
All Dimensions in mm
Q2
EQ1 BQ1 DQ2
Maximum Ratings, Total Device @ TA = 25C unless otherwise specified
Characteristic Power Dissipation (Note 2) Thermal Resistance, Junction to Ambient (Note 2) Operating and Storage and Temperature Range Symbol Pd RqJA Tj, TSTG Value 150 833 -55 to +150 Unit mW C/W C
Maximum Ratings, Q1, MMBT4403 PNP Transistor Element
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCBO VCEO VEBO IC
@ TA = 25C unless otherwise specified Value -40 -40 -5.0 -600 Unit V V V mA
Maximum Ratings, Q2, 2N7002 N-Channel MOSFET Element
Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 1.0MW Gate-Source Voltage Drain Current (Note 2) Continuous Pulsed Continuous Continuous @ 100C Pulsed Symbol VDSS VDGR VGSS ID
@ TA = 25C unless otherwise specified Value 60 60 20 40 115 73 800 Units V V V mA
Notes: 1. No purposefully added lead.
DS30296 Rev. 7 - 2
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CTA2P1N
a Diodes Incorporated
Electrical Characteristics, Q1, MMBT4403 PNP Transistor Element
@ TA = 25C unless otherwise specified
NEW PRODUCT
Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3)
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL
Min -40 -40 -5.0 3/4 3/4 30 60 100 100 20 3/4 -0.75 3/4 3/4 3/4 1.5 0.1 60 1.0 200
Max 3/4 3/4 3/4 -100 -100 3/4 3/4 3/4 300 3/4 -0.40 -0.75 -0.95 -1.30 8.5 30 15 8.0 500 100 3/4
Unit V V V nA nA
Test Condition IC = -100mA, IE = 0 IC = -1.0mA, IB = 0 IE = -100mA, IC = 0 VCE = -35V, VEB(OFF) = -0.4V VCE = -35V, VEB(OFF) = -0.4V IC = -100A, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = -1.0V -1.0V -1.0V -2.0V -2.0V
DC Current Gain
hFE
3/4
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
VCE(SAT) VBE(SAT)
V V
IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VCB = -10V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0
Ccb Ceb hie hre hfe hoe fT
pF pF kW x 10-4 3/4 mS MHz
VCE = -10V, IC = -1.0mA, f = 1.0kHz
VCE = -10V, IC = -20mA, f = 100MHz
td tr ts tf
3/4 3/4 3/4 3/4
15 20 225 30
ns ns ns ns
VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA
Electrical Characteristics, Q2, 2N7002 N-Channel MOSFET Element
@ TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time tD(ON) tD(OFF) 3/4 3/4 7.0 11 20 20 ns ns VDD = 30V, ID = 0.2A, RL = 150W, VGEN = 10V, RGEN = 25W Ciss Coss Crss 3/4 3/4 3/4 22 11 2.0 50 25 5.0 pF pF pF VDS = 25V, VGS = 0V f = 1.0MHz VGS(th) @ Tj = 25C @ Tj = 125C RDS (ON) ID(ON) gFS 1.0 3/4 0.5 80 3/4 3.2 4.4 1.0 3/4 2.0 7.5 13.5 3/4 3/4 V W A mS VDS = VGS, ID =-250mA VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A @ TC = 25C @ TC = 125C BVDSS IDSS IGSS 60 3/4 3/4 70 3/4 3/4 3/4 1.0 500 10 V A nA VGS = 0V, ID = 10mA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V Symbol Min Typ Max Unit Test Condition
Note: 2. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. Short test pulse used to minimize self-heating effect.
DS30296 Rev. 7 - 2
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CTA2P1N
Ordering Information
(Note 4) Packaging SOT-363 Shipping 3000/Tape & Reel
NEW PRODUCT
Device CTA2P1N-7-F
Notes:
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
A80
Date Code Key Year Code Month Code 2001 M Jan 1 2002 N Feb 2 2003 P March 3 Apr 4
A80 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
2004 R May 5
YM
2005 S Jun 6
2006 T Jul 7 Aug 8
2007 U Sep 9
2008 V Oct O Nov N
2009 W Dec D
DS30296 Rev. 7 - 2
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CTA2P1N
MMBT4403 Section
NEW PRODUCT
30 20
Cibo
CAPACITANCE (pF)
10
5.0
Cobo
1.0 -0.1
-1.0
-10
-30
REVERSE VOLTAGE (V) Fig. 1 Typical Capacitance
VCE, COLLECTOR-EMITTER VOLTAGE (V)
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001
IC = 10mA IC = 1mA IC = 100mA I = 300mA C IC = 30mA
0.01
0.1
1
10
100
IB, BASE CURRENT (mA) Fig. 2 Typical Collector Saturation Region
0.5
VBE(ON), BASE EMITTER VOLTAGE (V)
VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V)
IC IB = 10 0.4 TA = 25C
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 10 100 TA = 150C TA = -50C TA = 25C VCE = 5V
0.3
0.2
TA = 150C
0.1 TA = 50C 0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3 Collector Emitter Saturation Voltage vs. Collector Current
IC, COLLECTOR CURRENT (mA) Fig. 4 Base-Emitter Voltage vs. Collector Current
DS30296 Rev. 7 - 2
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CTA2P1N
MMBT4403 Section
NEW PRODUCT
1000 VCE = 5V TA = 150C TA = 25C 100 TA = -50C
1000
fT, GAIN BANDWIDTH PRODUCT (MHz)
VCE = 5V
hFE, DC CURRENT GAIN
100
10
10
1 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 5 DC Current Gain vs. Collector Current
1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Gain Bandwidth Product vs. Collector Current
200
PD, POWER DISSIPATION (mW)
150
100
50
0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 7 Max Power Dissipation vs Ambient Temperature (Total Device)
DS30296 Rev. 7 - 2
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CTA2P1N
2N7002 Section
1.0
VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V
7
Tj = 25C
NEW PRODUCT
6 5
5.5V
VGS = 5.0V
0.8 ID, DRAIN-SOURCE CURRENT (A)
0.6
4
5.0V
3
0.4
VGS = 10V
2
0.2
1 0
0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 On-Region Characteristics (2N7002)
0
0.2
0.4
0.6
0.8
1.0
ID, DRAIN CURRENT (A) Fig. 9 On-Resistance vs Drain Current (2N7002)
6
3.0
5
2.5
4
ID = 50mA
ID = 500mA
2.0
3
2
1.5
VGS = 10V, ID = 200mA
1
1.0 -55
-30
-5
20
45
70
95
120
145
0 0 2 4 6 8 10 12 14 16 18
Tj, JUNCTION TEMPERATURE (C) Fig. 10 On-Resistance vs Junction Temperature (2N7002)
VGS, GATE TO SOURCE VOLTAGE (V) Fig. 11 On-Resistance vs. Gate-Source Voltage (2N7002)
10 VGS, GATE SOURCE VOLTAGE (V) 9 8 7 6 5 4 3 2 1 0 0 0.2
0.4
TA = -55C TA = +25C TA = +125C TA = +75C VDS = 10V
0.6
0.8
1
ID, DRAIN CURRENT (A) Fig. 12 Typical Transfer Characteristics (2N7002)
DS30296 Rev. 7 - 2
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CTA2P1N
IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
DS30296 Rev. 7 - 2
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a Diodes Incorporated

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